Toshiba Semiconductor and Storage TPN2R903PL,L1Q
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 200µA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 35A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
630mW (Ta), 75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2300 pF @ 15 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPN2R903
ECCN:
EAR99
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Yes. We ship TPN2R903PL,L1Q Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN2R903PL,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.1v @ 200µa. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. The maximum gate charge and given voltages include 26 nc @ 10 v. It has a maximum Rds On and voltage of 2.9mohm @ 35a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 630mw (ta), 75w (tc). The product's input capacitance at maximum includes 2300 pf @ 15 v. It has a long 52 weeks standard lead time. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. 8-tson advance (3.1x3.1) is the supplier device package value. The continuous current drain at 25°C is 70a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpn2r903, a base product number of the product. The product is designated with the ear99 code number.
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