Taiwan Semiconductor Corporation TSM130NB06LCR
Product Information
Base Part Number:
TSM130
Detailed Description:
N-Channel 60V 10A (Ta), 51A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-PDFN (5x6)
Input Capacitance (Ciss) (Max) @ Vds:
2175pF @ 30V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
37nC @ 10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 10A, 10V
Supplier Device Package:
8-PDFN (5x6)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN
Power Dissipation (Max):
3.1W (Ta), 83W (Tc)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 51A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Taiwan Semiconductor Corporation
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship TSM130NB06LCR Internationally to many countries around the world.
This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM130NB06LCR. Base Part Number: tsm130. It features n-channel 60v 10a (ta), 51a (tc) 3.1w (ta), 83w (tc) surface mount 8-pdfn (5x6). The product's input capacitance at maximum includes 2175pf @ 30v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 37nc @ 10v. It has a maximum Rds On and voltage of 13mohm @ 10a, 10v. 8-pdfn (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powertdfn. The product carries maximum power dissipation 3.1w (ta), 83w (tc). The continuous current drain at 25°C is 10a (ta), 51a (tc). This product use mosfet (metal oxide) technology. The taiwan semiconductor corporation's product offers user-desired applications.
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