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Infineon Technologies IMW120R090M1HXKSA1

IMW120R090M1HXKSA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.7V @ 3.7mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
117mOhm @ 8.5A, 18V
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
IMW120R090M1HXKSA1 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
edacadModelUrl:
/en/models/10296198
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+23V, -7V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
115W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
707 pF @ 800 V
standardLeadTime:
28 Weeks
Mounting Type:
Through Hole
Series:
CoolSiC™
Supplier Device Package:
PG-TO247-3-41
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
IMW120
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IMW120R090M1HXKSA1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.7v @ 3.7ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 117mohm @ 8.5a, 18v. The maximum gate charge and given voltages include 21 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +23v, -7v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 115w (tc). The product's input capacitance at maximum includes 707 pf @ 800 v. It has a long 28 weeks standard lead time. The product is available in through hole configuration. The product coolsic™, is a highly preferred choice for users. pg-to247-3-41 is the supplier device package value. The continuous current drain at 25°C is 26a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to imw120, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

Yes. You can also search IMW120R090M1HXKSA1 on website for other similar products.
We accept all major payment methods for all products including ET18393153. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IMW120R090M1HXKSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IMW120R090M1HXKSA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IMW120R090M1HXKSA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18393153 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18393153.
Yes. We ship IMW120R090M1HXKSA1 Internationally to many countries around the world.