Vishay Siliconix SISS61DN-T1-GE3

SISS61DN-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 15A, 4.5V
title:
SISS61DN-T1-GE3
Vgs(th) (Max) @ Id:
900mV @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
SISS61DN-T1-GE3 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/10064163
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta), 65.8W (Tc)
standardLeadTime:
19 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
8740 pF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen III
Gate Charge (Qg) (Max) @ Vgs:
231 nC @ 10 V
Supplier Device Package:
PowerPAK® 1212-8S
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
30.9A (Ta), 111.9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISS61
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SISS61DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8s. It has a maximum Rds On and voltage of 3.5mohm @ 15a, 4.5v. The typical Vgs (th) (max) of the product is 900mv @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5w (ta), 65.8w (tc). It has a long 19 weeks standard lead time. The product's input capacitance at maximum includes 8740 pf @ 10 v. The product is available in surface mount configuration. The product trenchfet® gen iii, is a highly preferred choice for users. The maximum gate charge and given voltages include 231 nc @ 10 v. powerpak® 1212-8s is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 30.9a (ta), 111.9a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to siss61, a base product number of the product. The product is designated with the ear99 code number.

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Manufacturing Capacity Expansion 27/Jul/2023(PCN Assembly/Origin)
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SISS61DN(Datasheets)

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FAQs

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SISS61DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SISS61DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18381985 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18381985.
Yes. We ship SISS61DN-T1-GE3 Internationally to many countries around the world.