STMicroelectronics STP26N65DM2
Product Information
Typical Gate Charge @ Vgs:
35.5 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
160 W
Maximum Gate Source Voltage:
±25 V
Maximum Gate Threshold Voltage:
5V
Height:
15.75mm
Width:
4.6mm
Length:
10.4mm
Maximum Drain Source Resistance:
190 μΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
25 A
Minimum Gate Threshold Voltage:
3V
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
190mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
35.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STP26N65DM2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/10414715
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1480 pF @ 100 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ DM2
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP26
ECCN:
EAR99
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Yes. We ship STP26N65DM2 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STP26N65DM2. With a typical gate charge at Vgs includes 35.5 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 160 w maximum power dissipation. It features a maximum gate source voltage of ±25 v. The product carries 5v of maximum gate threshold voltage. In addition, the height is 15.75mm. Furthermore, the product is 4.6mm wide. Its accurate length is 10.4mm. It provides up to 190 μω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 25 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3v. Its forward diode voltage is 1.6v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 190mohm @ 10a, 10v. The maximum gate charge and given voltages include 35.5 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 170w (tc). The product's input capacitance at maximum includes 1480 pf @ 100 v. It has a long 16 weeks standard lead time. The product mdmesh™ dm2, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 20a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stp26, a base product number of the product. The product is designated with the ear99 code number.
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