Vishay Siliconix SIRA28BDP-T1-GE3

SIRA28BDP-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 30V 18A (Ta), 38A (Tc) 3.8W (Ta), 17W (Tc) Surface Mount PowerPAK® SO-8
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Base Part Number:
SIRA28
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:
582pF @ 15V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SO-8
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
18A (Ta), 38A (Tc)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 17W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIRA28BDP-T1-GE3. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 30v 18a (ta), 38a (tc) 3.8w (ta), 17w (tc) surface mount powerpak® so-8. The typical Vgs (th) (max) of the product is 2.4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. Base Part Number: sira28. The maximum gate charge and given voltages include 14nc @ 10v. It has a maximum Rds On and voltage of 7.5mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is +20v, -16v. The product's input capacitance at maximum includes 582pf @ 15v. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® so-8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 18a (ta), 38a (tc). The product carries maximum power dissipation 3.8w (ta), 17w (tc). This product use mosfet (metal oxide) technology.

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SIRA28BDP Datasheet(Datasheets)

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FAQs

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You will get a confirmation email regarding your order of Vishay Siliconix SIRA28BDP-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIRA28BDP-T1-GE3.
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