Maximum Continuous Drain Current:
72 A
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.75V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.25V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
117 nC @ 10 V
Channel Type:
N
Length:
15.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
446 W
Maximum Gate Source Voltage:
±25 V
Height:
21.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
36 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
-
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
-
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STWA75N60DM6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
-
edacadModelUrl:
/en/models/9696987
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
standardLeadTime:
26 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ DM6
Supplier Device Package:
TO-247 Long Leads
Current - Continuous Drain (Id) @ 25°C:
72A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STWA75
ECCN:
EAR99
This is manufactured by STMicroelectronics. The manufacturer part number is STWA75N60DM6. While 72 a of maximum continuous drain current. Furthermore, the product is 5.1mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4.75v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.25v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 117 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 446 w maximum power dissipation. It features a maximum gate source voltage of ±25 v. In addition, the height is 21.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.6v . It provides up to 36 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. Moreover, the product comes in to-247-3. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). It has a long 26 weeks standard lead time. The product mdmesh™ dm6, is a highly preferred choice for users. to-247 long leads is the supplier device package value. The continuous current drain at 25°C is 72a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stwa75, a base product number of the product. The product is designated with the ear99 code number.
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