NXP USA Inc. PSMN9R0-30LL,115
Product Information
Base Part Number:
PSMN9
Detailed Description:
N-Channel 30V 21A (Tc) 50W (Tc) Surface Mount 8-DFN3333 (3.3x3.3)
Input Capacitance (Ciss) (Max) @ Vds:
1193pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
20.6nC @ 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 5A, 10V
Supplier Device Package:
8-DFN3333 (3.3x3.3)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-VDFN Exposed Pad
Power Dissipation (Max):
50W (Tc)
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
NXP USA Inc.
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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN9R0-30LL,115. Base Part Number: psmn9. It features n-channel 30v 21a (tc) 50w (tc) surface mount 8-dfn3333 (3.3x3.3). The product's input capacitance at maximum includes 1193pf @ 15v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.15v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 20.6nc @ 10v. It has a maximum Rds On and voltage of 9mohm @ 5a, 10v. 8-dfn3333 (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-vdfn exposed pad. The product carries maximum power dissipation 50w (tc). The continuous current drain at 25°C is 21a (tc). This product use mosfet (metal oxide) technology. The nxp usa inc.'s product offers user-desired applications.
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