Microsemi Corporation APT10M09B2VFRG
Product Information
Rds On (Max) @ Id, Vgs:
9mOhm @ 50A, 10V
Detailed Description:
N-Channel 100V 100A (Tc) 625W (Tc) Through Hole T-MAX™ [B2]
Input Capacitance (Ciss) (Max) @ Vds:
9875pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 2.5mA
Series:
POWER MOS V®
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
350nC @ 10V
Supplier Device Package:
T-MAX™ [B2]
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-247-3 Variant
Power Dissipation (Max):
625W (Tc)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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FAQs
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You can order Microsemi Corporation brand products with APT10M09B2VFRG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation APT10M09B2VFRG. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation APT10M09B2VFRG.
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Yes. We ship APT10M09B2VFRG Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT10M09B2VFRG. It has a maximum Rds On and voltage of 9mohm @ 50a, 10v. It features n-channel 100v 100a (tc) 625w (tc) through hole t-max™ [b2]. The product's input capacitance at maximum includes 9875pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 2.5ma. The product power mos v®, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 350nc @ 10v. t-max™ [b2] is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3 variant. The product carries maximum power dissipation 625w (tc). The product has a 100v drain to source voltage. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
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