IXYS IXFT60N65X2HV
Product Information
Maximum Continuous Drain Current:
60 A
Width:
15.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-268HV
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
108 nC @ 10 V
Channel Type:
N
Length:
16.05mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
780 W
Series:
HiperFET
Maximum Gate Source Voltage:
±30 V
Height:
5.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
52 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Rds On (Max) @ Id, Vgs:
52mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
108 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
780W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6300 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Surface Mount
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
TO-268HV (IXFT)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFT60
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search IXFT60N65X2HV on website for other similar products.
We accept all major payment methods for all products including ET16012952. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFT60N65X2HV directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFT60N65X2HV. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFT60N65X2HV.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16012952 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16012952.
Yes. We ship IXFT60N65X2HV Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFT60N65X2HV. While 60 a of maximum continuous drain current. Furthermore, the product is 15.15mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-268hv. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 108 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.05mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 780 w maximum power dissipation. The product hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 5.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 52 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-268-3, d3pak (2 leads + tab), to-268aa. It has a maximum Rds On and voltage of 52mohm @ 30a, 10v. The maximum gate charge and given voltages include 108 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 780w (tc). The product's input capacitance at maximum includes 6300 pf @ 25 v. It has a long 47 weeks standard lead time. The product hiperfet™, ultra x2, is a highly preferred choice for users. to-268hv (ixft) is the supplier device package value. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixft60, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.