IXYS IXFN170N65X2

IXFN170N65X2 IXYS
IXFN170N65X2
IXYS

Product Information

Maximum Continuous Drain Current:
170 A
Width:
25.07mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
SOT-227
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
434 @ 10 V nC
Channel Type:
N
Length:
38.23mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Screw Mount
Maximum Power Dissipation:
1.17 kW
Series:
HiperFET
Maximum Gate Source Voltage:
±30 V
Height:
9.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
13 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
13mOhm @ 85A, 10V
Gate Charge (Qg) (Max) @ Vgs:
434 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
27000 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
SOT-227B
Current - Continuous Drain (Id) @ 25°C:
170A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN170
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by IXYS. The manufacturer part number is IXFN170N65X2. While 170 a of maximum continuous drain current. Furthermore, the product is 25.07mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of sot-227. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 434 @ 10 v nc. The product is available in [Cannel Type] channel. Its accurate length is 38.23mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in screw mount configuration. Provides up to 1.17 kw maximum power dissipation. The product hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 9.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 13 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 8ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-227-4, minibloc. It has a maximum Rds On and voltage of 13mohm @ 85a, 10v. The maximum gate charge and given voltages include 434 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1170w (tc). The product's input capacitance at maximum includes 27000 pf @ 25 v. It has a long 47 weeks standard lead time. The product is available in chassis mount configuration. The product hiperfet™, ultra x2, is a highly preferred choice for users. sot-227b is the supplier device package value. The continuous current drain at 25°C is 170a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfn170, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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IXFN170N65X2(Datasheets)

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FAQs

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Yes. We ship IXFN170N65X2 Internationally to many countries around the world.