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Toshiba Semiconductor and Storage TPC6109-H(TE85L,FM

TPC6109-H-TE85L-FM Toshiba Semiconductor and Storage TPC6109-H(TE85L,FM
TPC6109-H(TE85L,FM
TPC6109-H(TE85L,FM
Toshiba Semiconductor and Storage

Product Information

Detailed Description:
P-Channel 30V 5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8)
Vgs(th) (Max) @ Id:
1.2V @ 200µA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
TC554001
Gate Charge (Qg) (Max) @ Vgs:
12.3nC @ 10V
Rds On (Max) @ Id, Vgs:
59mOhm @ 2.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
490pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSIII-H
Supplier Device Package:
VS-6 (2.9x2.8)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Customer Reference:
Power Dissipation (Max):
700mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC6109-H(TE85L,FM. It features p-channel 30v 5a (ta) 700mw (ta) surface mount vs-6 (2.9x2.8). The typical Vgs (th) (max) of the product is 1.2v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: tc554001. The maximum gate charge and given voltages include 12.3nc @ 10v. It has a maximum Rds On and voltage of 59mohm @ 2.5a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 490pf @ 10v. The product is available in surface mount configuration. The product u-mosiii-h, is a highly preferred choice for users. vs-6 (2.9x2.8) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5a (ta). The product carries maximum power dissipation 700mw (ta). This product use mosfet (metal oxide) technology.

pdf icon
TPC6109-H(Datasheets)
pdf icon
Mosfets Prod Guide(Datasheets)

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