This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC6109-H(TE85L,FM. It features p-channel 30v 5a (ta) 700mw (ta) surface mount vs-6 (2.9x2.8). The typical Vgs (th) (max) of the product is 1.2v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: tc554001. The maximum gate charge and given voltages include 12.3nc @ 10v. It has a maximum Rds On and voltage of 59mohm @ 2.5a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 490pf @ 10v. The product is available in surface mount configuration. The product u-mosiii-h, is a highly preferred choice for users. vs-6 (2.9x2.8) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5a (ta). The product carries maximum power dissipation 700mw (ta). This product use mosfet (metal oxide) technology.
TPC6109-H(Datasheets)
Mosfets Prod Guide(Datasheets)
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC6109-H(TE85L,FM. It features p-channel 30v 5a (ta) 700mw (ta) surface mount vs-6 (2.9x2.8). The typical Vgs (th) (max) of the product is 1.2v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: tc554001. The maximum gate charge and given voltages include 12.3nc @ 10v. It has a maximum Rds On and voltage of 59mohm @ 2.5a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 490pf @ 10v. The product is available in surface mount configuration. The product u-mosiii-h, is a highly preferred choice for users. vs-6 (2.9x2.8) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5a (ta). The product carries maximum power dissipation 700mw (ta). This product use mosfet (metal oxide) technology.
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