Toshiba Semiconductor and Storage TK4R4P06PL,RQ

TK4R4P06PL-RQ Toshiba Semiconductor and Storage TK4R4P06PL,RQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 500µA
Operating Temperature:
175°C
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 29A, 10V
edacadModel:
TK4R4P06PL,RQ Models
Gate Charge (Qg) (Max) @ Vgs:
48.2 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/7623040
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
87W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3280 pF @ 30 V
standardLeadTime:
24 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK4R4P06
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK4R4P06PL,RQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 500µa. The product has 175°c operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 4.4mohm @ 29a, 10v. The maximum gate charge and given voltages include 48.2 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 87w (tc). The product's input capacitance at maximum includes 3280 pf @ 30 v. It has a long 24 weeks standard lead time. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. dpak is the supplier device package value. The continuous current drain at 25°C is 58a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk4r4p06, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK4R4P06PL,RQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK4R4P06PL,RQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14929329 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14929329.
Yes. We ship TK4R4P06PL,RQ Internationally to many countries around the world.