Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Vishay Siliconix SQ2364EES-T1_GE3

SQ2364EES-T1_GE3 Vishay Siliconix
SQ2364EES-T1_GE3
Vishay Siliconix

Product Information

Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.4mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
0.46V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
2 nC @ 4.5 V
Channel Type:
N
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±8 V
Height:
1.02mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
600 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
240mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.5 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
330 pF @ 25 V
Qualification:
AEC-Q101
standardLeadTime:
17 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQ2364
ECCN:
EAR99
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SQ2364EES-T1_GE3. While 2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 0.46v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 2 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.04mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±8 v. In addition, the height is 1.02mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 600 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 240mohm @ 2a, 4.5v. The maximum gate charge and given voltages include 2.5 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 1v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3w (tc). The product's input capacitance at maximum includes 330 pf @ 25 v. It has a long 17 weeks standard lead time. The product is automotive, a grade of class. The product trenchfet®, is a highly preferred choice for users. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 2a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sq2364, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
Datasheet(Technical Reference)
pdf icon
SQ2364EES(Datasheets)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search SQ2364EES-T1_GE3 on website for other similar products.
We accept all major payment methods for all products including ET14865885. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SQ2364EES-T1_GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SQ2364EES-T1_GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SQ2364EES-T1_GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14865885 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14865885.
Yes. We ship SQ2364EES-T1_GE3 Internationally to many countries around the world.