Enjoy 5% savings by entering the code 'SAVE5' when you spend £50 or more!

Vishay Siliconix SIS888DN-T1-GE3

SIS888DN-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TA)
Package / Case:
PowerPAK® 1212-8S
Rds On (Max) @ Id, Vgs:
58mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
14.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
420 pF @ 75 V
standardLeadTime:
62 Weeks
Mounting Type:
Surface Mount
Series:
ThunderFET®
Supplier Device Package:
PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C:
20.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIS888
ECCN:
EAR99
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIS888DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.2v @ 250µa. The product has -55°c ~ 150°c (ta) operating temperature range. Moreover, the product comes in powerpak® 1212-8s. It has a maximum Rds On and voltage of 58mohm @ 10a, 10v. The maximum gate charge and given voltages include 14.5 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 7.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 150 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 52w (tc). The product's input capacitance at maximum includes 420 pf @ 75 v. It has a long 62 weeks standard lead time. The product is available in surface mount configuration. The product thunderfet®, is a highly preferred choice for users. powerpak® 1212-8s is the supplier device package value. The continuous current drain at 25°C is 20.2a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sis888, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
Manufacturing Capacity Expansion 27/Jul/2023(PCN Assembly/Origin)
pdf icon
SIS888DN(Datasheets)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search SIS888DN-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET14865810. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIS888DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIS888DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIS888DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14865810 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14865810.
Yes. We ship SIS888DN-T1-GE3 Internationally to many countries around the world.