Category:
Power MOSFET
Dimensions:
15.87 x 5.31 x 20.82mm
Maximum Continuous Drain Current:
69 A
Transistor Material:
Si
Width:
5.31mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
40 mΩ
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
171 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6709 pF @ 100 V
Length:
15.87mm
Pin Count:
3
Forward Transconductance:
28S
Typical Turn-Off Delay Time:
244 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
520 W
Series:
EL-Series
Maximum Gate Source Voltage:
±30 V
Height:
20.82mm
Typical Turn-On Delay Time:
51 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
42mOhm @ 36.5A, 10V
title:
SIHG73N60AEL-GE3
Vgs(th) (Max) @ Id:
4V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6709 pF @ 100 V
Mounting Type:
Through Hole
Series:
EL
Gate Charge (Qg) (Max) @ Vgs:
342 nC @ 10 V
Supplier Device Package:
TO-247AC
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
69A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHG73
ECCN:
EAR99
