Vishay Siliconix SIHB30N60AEL-GE3
Product Information
Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 11.3mm
Maximum Continuous Drain Current:
28 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
120 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
60 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2565 pF @ 100 V
Length:
10.67mm
Pin Count:
3 + Tab
Forward Transconductance:
19S
Typical Turn-Off Delay Time:
79 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 W
Series:
EL-Series
Maximum Gate Source Voltage:
±30 V
Height:
11.3mm
Typical Turn-On Delay Time:
26 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
120mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2565 pF @ 100 V
Mounting Type:
Surface Mount
Series:
EL
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Power Dissipation (Max):
250W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHB30
ECCN:
EAR99
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Yes. We ship SIHB30N60AEL-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SIHB30N60AEL-GE3. It is of power mosfet category . The given dimensions of the product include 10.67 x 4.83 x 11.3mm. While 28 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. It provides up to 120 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 60 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2565 pf @ 100 v . Its accurate length is 10.67mm. It contains 3 + tab pins. The forward transconductance is 19s . Whereas, its typical turn-off delay time is about 79 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 250 w maximum power dissipation. The product el-series, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 11.3mm. In addition, it has a typical 26 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 120 nc @ 10 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 120mohm @ 15a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2565 pf @ 100 v. The product el, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 28a (tc). The product carries maximum power dissipation 250w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sihb30, a base product number of the product. The product is designated with the ear99 code number.
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