Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 11.3mm
Maximum Continuous Drain Current:
28 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
120 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
60 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2565 pF @ 100 V
Length:
10.67mm
Pin Count:
3 + Tab
Forward Transconductance:
19S
Typical Turn-Off Delay Time:
79 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 W
Series:
EL-Series
Maximum Gate Source Voltage:
±30 V
Height:
11.3mm
Typical Turn-On Delay Time:
26 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
120mOhm @ 15A, 10V
title:
SIHB30N60AEL-GE3
Vgs(th) (Max) @ Id:
4V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2565 pF @ 100 V
Mounting Type:
Surface Mount
Series:
EL
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Power Dissipation (Max):
250W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHB30
ECCN:
EAR99
