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Vishay Siliconix SIHA2N80E-GE3

SIHA2N80E-GE3 Vishay Siliconix
SIHA2N80E-GE3
Vishay Siliconix

Product Information

Maximum Continuous Drain Current:
2.8 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.8 nC @ 10 V
Channel Type:
N
Length:
10.3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
29 W
Series:
E-Series
Maximum Gate Source Voltage:
±30 V
Height:
15.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.75 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
2.75Ohm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
19.6 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
29W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
315 pF @ 100 V
standardLeadTime:
21 Weeks
Mounting Type:
Through Hole
Series:
E
Supplier Device Package:
TO-220 Full Pack
Current - Continuous Drain (Id) @ 25°C:
2.8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHA2
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIHA2N80E-GE3. While 2.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 9.8 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 29 w maximum power dissipation. The product e-series, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 15.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2.75 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 2.75ohm @ 1a, 10v. The maximum gate charge and given voltages include 19.6 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 29w (tc). The product's input capacitance at maximum includes 315 pf @ 100 v. It has a long 21 weeks standard lead time. The product e, is a highly preferred choice for users. to-220 full pack is the supplier device package value. The continuous current drain at 25°C is 2.8a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to siha2, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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SIHA2N80E(Datasheets)

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FAQs

Yes. You can also search SIHA2N80E-GE3 on website for other similar products.
We accept all major payment methods for all products including ET14865536. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIHA2N80E-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIHA2N80E-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIHA2N80E-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14865536 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14865536.
Yes. We ship SIHA2N80E-GE3 Internationally to many countries around the world.