This is manufactured by Vishay Siliconix. The manufacturer part number is SI5402BDC-T1-GE3. Base Part Number: si5402. It features n-channel 30v 4.9a (ta) 1.3w (ta) surface mount 1206-8 chipfet™. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 35mohm @ 4.9a, 10v. 1206-8 chipfet™ is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-smd, flat lead. The product carries maximum power dissipation 1.3w (ta). The product has a 30v drain to source voltage. The continuous current drain at 25°C is 4.9a (ta). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI5402BDC-T1-GE3. Base Part Number: si5402. It features n-channel 30v 4.9a (ta) 1.3w (ta) surface mount 1206-8 chipfet™. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 35mohm @ 4.9a, 10v. 1206-8 chipfet™ is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-smd, flat lead. The product carries maximum power dissipation 1.3w (ta). The product has a 30v drain to source voltage. The continuous current drain at 25°C is 4.9a (ta). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.
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