STMicroelectronics STN5PF02V
Product Information
Detailed Description:
P-Channel 20V 4.2A (Tc) 2.5W (Tc) Surface Mount SOT-223
Vgs(th) (Max) @ Id:
450mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
STN5P
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 2.5V
Rds On (Max) @ Id, Vgs:
80mOhm @ 2.1A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
412pF @ 15V
Mounting Type:
Surface Mount
Series:
STripFET™ II
Supplier Device Package:
SOT-223
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.2A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship STN5PF02V Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STN5PF02V. It features p-channel 20v 4.2a (tc) 2.5w (tc) surface mount sot-223. The typical Vgs (th) (max) of the product is 450mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Base Part Number: stn5p. The maximum gate charge and given voltages include 6nc @ 2.5v. It has a maximum Rds On and voltage of 80mohm @ 2.1a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The stmicroelectronics's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 412pf @ 15v. The product is available in surface mount configuration. The product stripfet™ ii, is a highly preferred choice for users. sot-223 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4.2a (tc). The product carries maximum power dissipation 2.5w (tc). This product use mosfet (metal oxide) technology.
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