Fairchild HUF75344P3 N-channel MOSFET, 75 A, 55 V UltraFET, 3-Pin TO-220AB
Product Information
Category:
Power MOSFET
Dimensions:
10.67 x 4.7 x 16.3mm
Maximum Continuous Drain Current:
75 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
175 nC @ 20 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3200 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
46 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
285 W
Series:
UltraFET
Maximum Gate Source Voltage:
±20 V
Height:
16.3mm
Typical Turn-On Delay Time:
187 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8 mΩ
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
210 nC @ 20 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
8mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
285W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3200 pF @ 25 V
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship HUF75344P3 Internationally to many countries around the world.
This is Fairchild N-channel MOSFET 75 A 55 V UltraFET 3-Pin TO-220AB manufactured by Fairchild Semiconductor. The manufacturer part number is HUF75344P3. It is of power mosfet category . The given dimensions of the product include 10.67 x 4.7 x 16.3mm. While 75 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 175 nc @ 20 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3200 pf@ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 46 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 285 w maximum power dissipation. The product ultrafet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 16.3mm. In addition, it has a typical 187 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8 mω maximum drain source resistance. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 210 nc @ 20 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 8mohm @ 75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 285w (tc). The product's input capacitance at maximum includes 3200 pf @ 25 v. The product ultrafet™, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology.
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