Vishay Siliconix IRFR210PBF N-channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK
Product Information
Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.38mm
Maximum Continuous Drain Current:
2.6 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
140 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
0.8S
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
25 W
Maximum Gate Source Voltage:
±20 V
Height:
2.38mm
Typical Turn-On Delay Time:
8.2 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
2V
Maximum Drain Source Resistance:
1.5 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
edacadModel:
IRFR210PBF Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/856716
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
2.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFR210
ECCN:
EAR99
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FAQs
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You can order Vishay Siliconix brand products with IRFR210PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix IRFR210PBF N-channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix IRFR210PBF N-channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK.
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Yes. We ship IRFR210PBF Internationally to many countries around the world.
This is N-channel MOSFET 2.6 A 200 V 3-Pin DPAK manufactured by Vishay Siliconix. The manufacturer part number is IRFR210PBF. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.38mm. While 2.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The package is a sort of dpak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 8.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 140 pf @ 25 v . Its accurate length is 6.73mm. It contains 3 pins. The forward transconductance is 0.8s . Whereas, its typical turn-off delay time is about 14 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 25 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.38mm. In addition, it has a typical 8.2 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 2v . It provides up to 1.5 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 1.5ohm @ 1.6a, 10v. The maximum gate charge and given voltages include 8.2 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.5w (ta), 25w (tc). The product's input capacitance at maximum includes 140 pf @ 25 v. It has a long 8 weeks standard lead time. dpak is the supplier device package value. The continuous current drain at 25°C is 2.6a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to irfr210, a base product number of the product. The product is designated with the ear99 code number.
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