Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Width:
0.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
PICOSTAR
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.913 nC @ 4.5 V
Channel Type:
P
Length:
1mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
FemtoFET
Height:
0.35mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
800 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Rds On (Max) @ Id, Vgs:
88mOhm @ 500mA, 8V
Gate Charge (Qg) (Max) @ Vgs:
0.913 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD25481F4 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/4437948
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
-12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
standardLeadTime:
6 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
189 pF @ 10 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
3-PICOSTAR
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD25481
ECCN:
EAR99
