Dimensions:
5.1 x 5.85 x 1.05mm
Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
81 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5118 pF@ 13 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
51 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
78 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
12 V
Height:
1.05mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.1 mΩ
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
1.5mOhm @ 33A, 10V
Gate Charge (Qg) (Max) @ Vgs:
81 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5118 pF @ 13 V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25°C:
33A (Ta), 90A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS85
ECCN:
EAR99
