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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK9A60D(STA4,Q,M). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 830mohm @ 4.5a, 10v. The maximum gate charge and given voltages include 24 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 1ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 1200 pf @ 25 v. The product is available in through hole configuration. The product π-mosvii, is a highly preferred choice for users. to-220sis is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 9a (ta). The product carries maximum power dissipation 45w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk9a60, a base product number of the product. The product is designated with the ear99 code number.
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