IXYS IXFT50N50P3
Product Information
Category:
Power MOSFET
Dimensions:
16.05 x 14 x 5.1mm
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
14mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
125 mΩ
Package Type:
TO-268
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
85 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4335 pF @ 25 V
Length:
16.05mm
Pin Count:
3
Typical Turn-Off Delay Time:
53 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
960 W
Series:
HiperFET, Polar3
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.1mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Rds On (Max) @ Id, Vgs:
120mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
85 nC @ 0 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
960W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4335 pF @ 25 V
standardLeadTime:
59 Weeks
Mounting Type:
Surface Mount
Series:
HiPerFET™, Polar3™
Supplier Device Package:
TO-268AA
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFT50
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search IXFT50N50P3 on website for other similar products.
We accept all major payment methods for all products including ET12595054. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFT50N50P3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFT50N50P3. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFT50N50P3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12595054 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12595054.
Yes. We ship IXFT50N50P3 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFT50N50P3. It is of power mosfet category . The given dimensions of the product include 16.05 x 14 x 5.1mm. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 14mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The product carries 5v of maximum gate threshold voltage. It provides up to 125 mω maximum drain source resistance. The package is a sort of to-268. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 85 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 4335 pf @ 25 v . Its accurate length is 16.05mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 53 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 960 w maximum power dissipation. The product hiperfet, polar3, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 5.1mm. In addition, it has a typical 25 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-268-3, d³pak (2 leads + tab), to-268aa. It has a maximum Rds On and voltage of 120mohm @ 25a, 10v. The maximum gate charge and given voltages include 85 nc @ 0 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 960w (tc). The product's input capacitance at maximum includes 4335 pf @ 25 v. It has a long 59 weeks standard lead time. The product hiperfet™, polar3™, is a highly preferred choice for users. to-268aa is the supplier device package value. The continuous current drain at 25°C is 50a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixft50, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.