Automotive Standard:
No
Maximum Power Dissipation Pd:
500W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
300V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
156nC
Maximum Drain Source Resistance Rds:
49mΩ
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.5V
Height:
21.46mm
Width:
5.3 mm
Length:
16.26mm
Package Type:
TO-247
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
69A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
49mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
180 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4960 pF @ 25 V
standardLeadTime:
26 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-247AD (IXFH)
Current - Continuous Drain (Id) @ 25°C:
69A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH69
ECCN:
EAR99
