Toshiba Semiconductor and Storage TK35E08N1,S1X

TK35E08N1-S1X Toshiba Semiconductor and Storage TK35E08N1,S1X
TK35E08N1,S1X
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
12.2mOhm @ 17.5A, 10V
title:
TK35E08N1,S1X
Vgs(th) (Max) @ Id:
4V @ 300µA
edacadModel:
TK35E08N1,S1X Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3587035
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
72W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 40 V
Mounting Type:
Through Hole
Series:
U-MOSVIII-H
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Supplier Device Package:
TO-220
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK35E08
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK35E08N1,S1X. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 12.2mohm @ 17.5a, 10v. The typical Vgs (th) (max) of the product is 4v @ 300µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 72w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 1700 pf @ 40 v. The product is available in through hole configuration. The product u-mosviii-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 25 nc @ 10 v. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 55a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk35e08, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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