Texas Instruments CSD18533Q5A
Product Information
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
VSONP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 4.5 V
Channel Type:
N
Length:
5.8mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.2 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8.5 mΩ
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 60V 17A (Ta), 100A (Tc) 3.2W (Ta), 116W (Tc) Surface Mount 8-VSONP (5x6)
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
CSD18533
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 18A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2750pF @ 30V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 100A (Tc)
Customer Reference:
Power Dissipation (Max):
3.2W (Ta), 116W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship CSD18533Q5A Internationally to many countries around the world.
This is manufactured by Texas Instruments. The manufacturer part number is CSD18533Q5A. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of vsonp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 5.8mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3.2 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8.5 mω maximum drain source resistance. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 60v 17a (ta), 100a (tc) 3.2w (ta), 116w (tc) surface mount 8-vsonp (5x6). The typical Vgs (th) (max) of the product is 2.3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: csd18533. The maximum gate charge and given voltages include 36nc @ 10v. It has a maximum Rds On and voltage of 5.9mohm @ 18a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The texas instruments's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2750pf @ 30v. The product nexfet™, is a highly preferred choice for users. 8-vsonp (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 17a (ta), 100a (tc). The product carries maximum power dissipation 3.2w (ta), 116w (tc). This product use mosfet (metal oxide) technology.
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