Forward Voltage Vf:
0.8V
Width:
5 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
14nC
Package Type:
SON
Maximum Continuous Drain Current Id:
100A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
8.5mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type N
Length:
5.8mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
3.2W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
NexFET
Height:
1.1mm
Minimum Operating Temperature:
-55°C
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 60V 17A (Ta), 100A (Tc) 3.2W (Ta), 116W (Tc) Surface Mount 8-VSONP (5x6)
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
CSD18533
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 18A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2750pF @ 30V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 100A (Tc)
Customer Reference:
Power Dissipation (Max):
3.2W (Ta), 116W (Tc)
Technology:
MOSFET (Metal Oxide)
