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Texas Instruments CSD25484F4T

CSD25484F4T Texas Instruments
CSD25484F4T
Texas Instruments

Product Information

Category:
Power MOSFET
Dimensions:
1.04 x 0.64 x 0.2mm
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Width:
0.64mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
PICOSTAR
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1090 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
175 pF @ -10 V
Length:
1.04mm
Pin Count:
3
Forward Transconductance:
3.5S
Typical Turn-Off Delay Time:
18 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.5 W
Series:
FemtoFET
Maximum Gate Source Voltage:
-12 V
Height:
0.2mm
Typical Turn-On Delay Time:
9.5 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.75V
Maximum Drain Source Resistance:
825 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Rds On (Max) @ Id, Vgs:
94mOhm @ 500mA, 8V
Gate Charge (Qg) (Max) @ Vgs:
1.42 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD25484F4T Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 8V
edacadModelUrl:
/en/models/5267354
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
-12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
230 pF @ 10 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
FemtoFET™
Supplier Device Package:
3-PICOSTAR
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD25484
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by Texas Instruments. The manufacturer part number is CSD25484F4T. It is of power mosfet category . The given dimensions of the product include 1.04 x 0.64 x 0.2mm. While 2.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 0.64mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of picostar. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1090 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 175 pf @ -10 v . Its accurate length is 1.04mm. It contains 3 pins. The forward transconductance is 3.5s . Whereas, its typical turn-off delay time is about 18 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.5 w maximum power dissipation. The product femtofet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v. In addition, the height is 0.2mm. In addition, it has a typical 9.5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.75v . It provides up to 825 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-xfdfn. It has a maximum Rds On and voltage of 94mohm @ 500ma, 8v. The maximum gate charge and given voltages include 1.42 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 8v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is -12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 230 pf @ 10 v. It has a long 6 weeks standard lead time. The product femtofet™, is a highly preferred choice for users. 3-picostar is the supplier device package value. The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd25484, a base product number of the product. The product is designated with the ear99 code number.

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Assembly Site 27/Jun/2023(PCN Assembly/Origin)
pdf icon
FemtoFET Surface Mount Guide(Datasheets)

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