Toshiba Semiconductor and Storage TK6Q65W,S1Q

TK6Q65W-S1Q Toshiba Semiconductor and Storage TK6Q65W,S1Q
TK6Q65W,S1Q
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 180µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-251-3 Stub Leads, IPak
Rds On (Max) @ Id, Vgs:
1.05Ohm @ 2.9A, 10V
edacadModel:
TK6Q65W,S1Q Models
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5456332
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
390 pF @ 300 V
standardLeadTime:
24 Weeks
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
I-Pak
Current - Continuous Drain (Id) @ 25°C:
5.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK6Q65
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK6Q65W,S1Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 180µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 stub leads, ipak. It has a maximum Rds On and voltage of 1.05ohm @ 2.9a, 10v. The maximum gate charge and given voltages include 11 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 60w (tc). The product's input capacitance at maximum includes 390 pf @ 300 v. It has a long 24 weeks standard lead time. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. i-pak is the supplier device package value. The continuous current drain at 25°C is 5.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk6q65, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET12241501 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12241501.
Yes. We ship TK6Q65W,S1Q Internationally to many countries around the world.