Maximum Continuous Drain Current:
273 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
3.2V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
120 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
375 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.8 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs:
156 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD19506KCS Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/4555586
Package:
Tube
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
12200 pF @ 40 V
standardLeadTime:
6 Weeks
Mounting Type:
Through Hole
Series:
NexFET™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19506
ECCN:
EAR99
The CSD19506KCS is a remarkable power MOSFET manufactured by Texas Instruments, a leading semiconductor company known for its high-quality electronic components. This particular MOSFET is designed to meet the demanding requirements of various power applications, offering efficient performance, high voltage tolerance, and excellent power dissipation capabilities.
Typical Applications of CSD19506KCS:
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