Texas Instruments CSD25304W1015T
Product Information
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.15V
Package Type:
DSBGA
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.55V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.3 nC @ 4.5 V
Channel Type:
P
Length:
1mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
750 mW
Series:
NexFET
Maximum Gate Source Voltage:
-8 V, +8 V
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
92 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.15V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFBGA, DSBGA
Rds On (Max) @ Id, Vgs:
32.5mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
4.4 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD25304W1015T Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/4959467
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
595 pF @ 10 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-DSBGA (1x1.5)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD25304W1015
ECCN:
EAR99
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This is manufactured by Texas Instruments. The manufacturer part number is CSD25304W1015T. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.5mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.15v of maximum gate threshold voltage. The package is a sort of dsbga. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.55v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.3 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 750 mw maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 92 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.15v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufbga, dsbga. It has a maximum Rds On and voltage of 32.5mohm @ 1.5a, 4.5v. The maximum gate charge and given voltages include 4.4 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 750mw (ta). The product's input capacitance at maximum includes 595 pf @ 10 v. It has a long 12 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. 6-dsbga (1x1.5) is the supplier device package value. The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd25304w1015, a base product number of the product. The product is designated with the ear99 code number.
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