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Toshiba Semiconductor and Storage TPN13008NH,L1Q

TPN13008NH-L1Q Toshiba Semiconductor and Storage TPN13008NH,L1Q
TPN13008NH,L1Q
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 200µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
13.3mOhm @ 9A, 10V
edacadModel:
TPN13008NH,L1Q Models
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
RoHS Status:
RoHS Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4875998
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
700mW (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 40 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPN13008
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN13008NH,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 13.3mohm @ 9a, 10v. The maximum gate charge and given voltages include 18 nc @ 10 v. The product is rohs compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 700mw (ta), 42w (tc). The product's input capacitance at maximum includes 1600 pf @ 40 v. It has a long 12 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-tson advance (3.1x3.1) is the supplier device package value. The continuous current drain at 25°C is 18a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpn13008, a base product number of the product. The product is designated with the ear99 code number.

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