Toshiba Semiconductor and Storage TK31V60X,LQ

TK31V60X-LQ Toshiba Semiconductor and Storage TK31V60X,LQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
4-VSFN Exposed Pad
Rds On (Max) @ Id, Vgs:
98mOhm @ 9.4A, 10V
title:
TK31V60X,LQ
Vgs(th) (Max) @ Id:
3.5V @ 1.5mA
edacadModel:
TK31V60X,LQ Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4815223
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
240W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3000 pF @ 300 V
Mounting Type:
Surface Mount
Series:
DTMOSIV-H
Gate Charge (Qg) (Max) @ Vgs:
65 nC @ 10 V
Supplier Device Package:
4-DFN-EP (8x8)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
30.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK31V60
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK31V60X,LQ. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 4-vsfn exposed pad. It has a maximum Rds On and voltage of 98mohm @ 9.4a, 10v. The typical Vgs (th) (max) of the product is 3.5v @ 1.5ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 240w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 3000 pf @ 300 v. The product is available in surface mount configuration. The product dtmosiv-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 65 nc @ 10 v. 4-dfn-ep (8x8) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 30.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk31v60, a base product number of the product. The product is designated with the ear99 code number.

Reviews

  • Be the first to review.

FAQs

Yes. You can also search TK31V60X,LQ on website for other similar products.
We accept all major payment methods for all products including ET12202930. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TK31V60X,LQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK31V60X,LQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK31V60X,LQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12202930 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12202930.
Yes. We ship TK31V60X,LQ Internationally to many countries around the world.