Maximum Power Dissipation Pd:
1.9W
Maximum Drain Source Voltage Vds:
100V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Resistance Rds:
12.9mΩ
Forward Voltage Vf:
1.2V
Channel Type:
Type N
Package Type:
TO-263
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
200A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Automotive Standard:
AEC-Q101
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Rds On (Max) @ Id, Vgs:
5.6mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs:
57 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
edacadModel:
CSD19532KTTT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/5764595
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
2 (1 Year)
Power Dissipation (Max):
250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5060 pF @ 50 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
TO-263 (DDPAK-3)
Current - Continuous Drain (Id) @ 25°C:
200A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19532
ECCN:
EAR99
