STMicroelectronics STD11N65M2
Product Information
Typical Gate Charge @ Vgs:
100 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
85 W
Maximum Gate Source Voltage:
±25 V
Maximum Gate Threshold Voltage:
4V
Height:
2.17mm
Width:
6.2mm
Length:
6.6mm
Maximum Drain Source Resistance:
680 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
670mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
12.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STD11N65M2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5030788
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
410 pF @ 100 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ II Plus
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD11
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship STD11N65M2 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STD11N65M2. With a typical gate charge at Vgs includes 100 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 85 w maximum power dissipation. It features a maximum gate source voltage of ±25 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 2.17mm. Furthermore, the product is 6.2mm wide. Its accurate length is 6.6mm. It provides up to 680 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 7 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.6v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 670mohm @ 3.5a, 10v. The maximum gate charge and given voltages include 12.5 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 85w (tc). The product's input capacitance at maximum includes 410 pf @ 100 v. It has a long 16 weeks standard lead time. The product mdmesh™ ii plus, is a highly preferred choice for users. dpak is the supplier device package value. The continuous current drain at 25°C is 7a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to std11, a base product number of the product. The product is designated with the ear99 code number.
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