Typical Gate Charge @ Vgs:
100 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
85 W
Maximum Gate Source Voltage:
±25 V
Maximum Gate Threshold Voltage:
4V
Height:
2.17mm
Width:
6.2mm
Length:
6.6mm
Maximum Drain Source Resistance:
680 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
670mOhm @ 3.5A, 10V
title:
STD11N65M2
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STD11N65M2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5030788
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
85W (Tc)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
410 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ II Plus
Gate Charge (Qg) (Max) @ Vgs:
12.5 nC @ 10 V
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD11
ECCN:
EAR99
