IXYS IXFN110N85X
Product Information
Maximum Continuous Drain Current:
110 A
Width:
25.07mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
850 V
Maximum Gate Threshold Voltage:
5.5V
Package Type:
SOT-227
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
425 @ 10 V nC
Channel Type:
N
Length:
38.23mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Screw Mount
Maximum Power Dissipation:
1.17 kW
Series:
HiperFET
Maximum Gate Source Voltage:
±30 V
Height:
9.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
33 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
33mOhm @ 55A, 10V
Gate Charge (Qg) (Max) @ Vgs:
425 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
850 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
1170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
17000 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Ultra X
Supplier Device Package:
SOT-227B
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN110
ECCN:
EAR99
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FAQs
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You can order IXYS brand products with IXFN110N85X directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFN110N85X. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFN110N85X.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12175169 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12175169.
Yes. We ship IXFN110N85X Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFN110N85X. While 110 a of maximum continuous drain current. Furthermore, the product is 25.07mm wide. The product offers single transistor configuration. It has a maximum of 850 v drain source voltage. The product carries 5.5v of maximum gate threshold voltage. The package is a sort of sot-227. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 425 @ 10 v nc. The product is available in [Cannel Type] channel. Its accurate length is 38.23mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in screw mount configuration. Provides up to 1.17 kw maximum power dissipation. The product hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 9.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 33 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.5v @ 8ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-227-4, minibloc. It has a maximum Rds On and voltage of 33mohm @ 55a, 10v. The maximum gate charge and given voltages include 425 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 850 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 1170w (tc). The product's input capacitance at maximum includes 17000 pf @ 25 v. It has a long 47 weeks standard lead time. The product is available in chassis mount configuration. The product hiperfet™, ultra x, is a highly preferred choice for users. sot-227b is the supplier device package value. The continuous current drain at 25°C is 110a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfn110, a base product number of the product. The product is designated with the ear99 code number.
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