Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Toshiba Semiconductor and Storage TPWR8503NL,L1Q

TPWR8503NL-L1Q Toshiba Semiconductor and Storage TPWR8503NL,L1Q
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
24 Weeks
Detailed Description:
N-Channel 30V 150A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Vgs(th) (Max) @ Id:
2.3V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
TC74HC132
Gate Charge (Qg) (Max) @ Vgs:
74nC @ 10V
Rds On (Max) @ Id, Vgs:
0.85mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6900pF @ 15V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-DSOP Advance
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
150A (Tc)
Customer Reference:
Power Dissipation (Max):
800mW (Ta), 142W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPWR8503NL,L1Q. It has typical 24 weeks of manufacturer standard lead time. It features n-channel 30v 150a (tc) 800mw (ta), 142w (tc) surface mount 8-dsop advance. The typical Vgs (th) (max) of the product is 2.3v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: tc74hc132. The maximum gate charge and given voltages include 74nc @ 10v. It has a maximum Rds On and voltage of 0.85mohm @ 50a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 6900pf @ 15v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-dsop advance is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 150a (tc). The product carries maximum power dissipation 800mw (ta), 142w (tc). This product use mosfet (metal oxide) technology.

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search TPWR8503NL,L1Q on website for other similar products.
We accept all major payment methods for all products including ET12148316. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TPWR8503NL,L1Q directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TPWR8503NL,L1Q. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TPWR8503NL,L1Q.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12148316 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12148316.
Yes. We ship TPWR8503NL,L1Q Internationally to many countries around the world.