Automotive Standard:
No
Maximum Power Dissipation Pd:
660W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
98nC
Maximum Drain Source Resistance Rds:
69mΩ
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.4V
Height:
5.21mm
Width:
21.34 mm
Length:
16.13mm
Package Type:
TO-247
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
46A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
76mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs:
75 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
660W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4810 pF @ 25 V
standardLeadTime:
47 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
TO-247 (IXTH)
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH46
ECCN:
EAR99
