Category:
Power MOSFET
Dimensions:
5.4 x 6.35 x 1mm
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
6.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
375 mΩ
Package Type:
Power Flat
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
816 pF @ 100 V
Length:
5.4mm
Pin Count:
8
Typical Turn-Off Delay Time:
11 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1mm
Typical Turn-On Delay Time:
30 ns
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
375mOhm @ 5A, 10V
title:
STL15N65M5
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STL15N65M5 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4309735
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
52W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
816 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ V
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Supplier Device Package:
PowerFlat™ (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL15
ECCN:
EAR99
