Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Width:
0.64mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.1V
Package Type:
PICOSTAR
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.01 nC @ 4.5 V
Channel Type:
N
Length:
1.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
FemtoFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.35mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
550 mΩ
Manufacturer Standard Lead Time:
6 Weeks
Detailed Description:
N-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Base Part Number:
CSD17483
Gate Charge (Qg) (Max) @ Vgs:
1.3nC @ 4.5V
Rds On (Max) @ Id, Vgs:
240mOhm @ 500mA, 8V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
12V
Input Capacitance (Ciss) (Max) @ Vds:
190pF @ 15V
Mounting Type:
Surface Mount
Series:
FemtoFET™
Supplier Device Package:
3-PICOSTAR
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
