Vishay Siliconix SI8851EDB-T2-E1
Product Information
Base Part Number:
SI8851
Detailed Description:
P-Channel 20V 7.7A (Ta) 660mW (Ta) Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
6900pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Series:
TrenchFET®
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
180nC @ 8V
Rds On (Max) @ Id, Vgs:
8mOhm @ 7A, 4.5V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
30-XFBGA
Power Dissipation (Max):
660mW (Ta)
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
7.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Vishay Siliconix
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FAQs
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We accept all major payment methods for all products including ET12057733. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SI8851EDB-T2-E1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SI8851EDB-T2-E1. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SI8851EDB-T2-E1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12057733 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12057733.
Yes. We ship SI8851EDB-T2-E1 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SI8851EDB-T2-E1. Base Part Number: si8851. It features p-channel 20v 7.7a (ta) 660mw (ta) surface mount. The product's input capacitance at maximum includes 6900pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 180nc @ 8v. It has a maximum Rds On and voltage of 8mohm @ 7a, 4.5v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 30-xfbga. The product carries maximum power dissipation 660mw (ta). The product has a 20v drain to source voltage. The continuous current drain at 25°C is 7.7a (ta). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.
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