Toshiba Semiconductor and Storage SSM3K09FU,LF

SSM3K09FU-LF Toshiba Semiconductor and Storage SSM3K09FU,LF
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 30V 400mA (Ta) 150mW (Ta) Surface Mount USM
Vgs(th) (Max) @ Id:
1.8V @ 100µA
Operating Temperature:
150°C
Package / Case:
SC-70, SOT-323
Base Part Number:
SSM3K09
Rds On (Max) @ Id, Vgs:
700mOhm @ 200MA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
3.3V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
20pF @ 5V
Mounting Type:
Surface Mount
Series:
π-MOSVI
Supplier Device Package:
USM
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Customer Reference:
Power Dissipation (Max):
150mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K09FU,LF. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 30v 400ma (ta) 150mw (ta) surface mount usm. The typical Vgs (th) (max) of the product is 1.8v @ 100µa. The product has 150°c operating temperature range. Moreover, the product comes in sc-70, sot-323. Base Part Number: ssm3k09. It has a maximum Rds On and voltage of 700mohm @ 200ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 3.3v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 20pf @ 5v. The product is available in surface mount configuration. The product π-mosvi, is a highly preferred choice for users. usm is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 400ma (ta). The product carries maximum power dissipation 150mw (ta). This product use mosfet (metal oxide) technology.

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FAQs

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