IXYS IXFR80N50Q3
Product Information
Category:
Power MOSFET
Dimensions:
16.13 x 5.21 x 21.34mm
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
6.5V
Package Type:
ISOPLUS247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
200 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
10000 pF@ 25 V
Length:
16.13mm
Pin Count:
3
Typical Turn-Off Delay Time:
43 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
570 W
Series:
HiperFET, Q3-Class
Maximum Gate Source Voltage:
±30 V
Height:
21.34mm
Typical Turn-On Delay Time:
30 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
72 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
6.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
72mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs:
200 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
570W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10000 pF @ 25 V
standardLeadTime:
59 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Q3 Class
Supplier Device Package:
ISOPLUS247™
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFR80
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search IXFR80N50Q3 on website for other similar products.
We accept all major payment methods for all products including ET11997662. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFR80N50Q3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFR80N50Q3. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFR80N50Q3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11997662 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11997662.
Yes. We ship IXFR80N50Q3 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFR80N50Q3. It is of power mosfet category . The given dimensions of the product include 16.13 x 5.21 x 21.34mm. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The product carries 6.5v of maximum gate threshold voltage. The package is a sort of isoplus247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 200 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 10000 pf@ 25 v . Its accurate length is 16.13mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 43 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 570 w maximum power dissipation. The product hiperfet, q3-class, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 21.34mm. In addition, it has a typical 30 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 72 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 6.5v @ 8ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 72mohm @ 40a, 10v. The maximum gate charge and given voltages include 200 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 570w (tc). The product's input capacitance at maximum includes 10000 pf @ 25 v. It has a long 59 weeks standard lead time. The product hiperfet™, q3 class, is a highly preferred choice for users. isoplus247™ is the supplier device package value. The continuous current drain at 25°C is 50a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfr80, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.