Maximum Drain Source Voltage:
90 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
6.25 W
Series:
2N6661
Maximum Gate Source Voltage:
20 V
Height:
6.6mm
Width:
9.398 Dia.mm
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
5 Ω
Package Type:
TO-39
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
350 mA
Minimum Gate Threshold Voltage:
0.8V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-205AD, TO-39-3 Metal Can
Rds On (Max) @ Id, Vgs:
4Ohm @ 1A, 10V
RoHS Status:
RoHS non-compliant
REACH Status:
REACH Unaffected
edacadModel:
2N6661 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/4902349
Package:
Bag
Drain to Source Voltage (Vdss):
90 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 24 V
standardLeadTime:
6 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-39
Current - Continuous Drain (Id) @ 25°C:
350mA (Tj)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
This is manufactured by Microchip Technology. The manufacturer part number is 2N6661. It has a maximum of 90 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 6.25 w maximum power dissipation. The product 2n6661, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 6.6mm. Furthermore, the product is 9.398 dia.mm wide. The product carries 2v of maximum gate threshold voltage. It provides up to 5 ω maximum drain source resistance. The package is a sort of to-39. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 350 ma of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.8v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-205ad, to-39-3 metal can. It has a maximum Rds On and voltage of 4ohm @ 1a, 10v. The product is rohs non-compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. It is shipped in bag package . The product has a 90 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 6.25w (tc). The product's input capacitance at maximum includes 50 pf @ 24 v. It has a long 6 weeks standard lead time. to-39 is the supplier device package value. The continuous current drain at 25°C is 350ma (tj). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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