Automotive Standard:
No
Maximum Power Dissipation Pd:
960W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
500V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
255nC
Maximum Drain Source Resistance Rds:
49mΩ
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.5V
Height:
9.6mm
Width:
25.07 mm
Length:
38.23mm
Package Type:
SOT-227
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
82A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
4
Mount Type:
Panel
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
49mOhm @ 50A, 10V
title:
IXFN100N50Q3
Vgs(th) (Max) @ Id:
6.5V @ 8mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
960W (Tc)
standardLeadTime:
44 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
13800 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Q3 Class
Gate Charge (Qg) (Max) @ Vgs:
255 nC @ 10 V
Supplier Device Package:
SOT-227B
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
82A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN100
ECCN:
EAR99
