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STMicroelectronics STP80N6F6

STP80N6F6 STMicroelectronics
STP80N6F6
STP80N6F6
ET11970992
ET11970992
Single FETs, MOSFETs
Single FETs, MOSFETs
STP80N6F6 STMicroelectronicsSTMicroelectronics
STMicroelectronics

Product Information

Category:
Power MOSFET
Dimensions:
10.4 x 4.6 x 15.75mm
Maximum Continuous Drain Current:
110 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
5.8 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
122 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7480 pF @ 25 V
Length:
10.4mm
Pin Count:
3
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Series:
DeepGate, STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.75mm
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
122 nC @ 10 V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STP80N6F6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4357582
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
120W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7480 pF @ 25 V
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Grade:
Automotive
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP80N
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STP80N6F6. It is of power mosfet category . The given dimensions of the product include 10.4 x 4.6 x 15.75mm. While 110 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. It provides up to 5.8 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 122 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 7480 pf @ 25 v . Its accurate length is 10.4mm. It contains 3 pins. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 150 w maximum power dissipation. The product deepgate, stripfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.75mm. Whereas, the minimum operating temperature of the product is -55 °c. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 5.8mohm @ 50a, 10v. The maximum gate charge and given voltages include 122 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 120w (tc). The product's input capacitance at maximum includes 7480 pf @ 25 v. The product is automotive, a grade of class. The product deepgate™, stripfet™ vi, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 110a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stp80n, a base product number of the product. The product is designated with the ear99 code number.

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STP80N6F6, N-Channel 60V, 110A STripFET VI DeepGATE Power MOSFET in TO-220 package Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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New Molding Compound 30/Aug/2019(PCN Assembly/Origin)
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STP80N6F6(Datasheets)

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Yes. We ship STP80N6F6 Internationally to many countries around the world.