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Toshiba Semiconductor and Storage TK39N60W5,S1VF

TK39N60W5-S1VF Toshiba Semiconductor and Storage TK39N60W5,S1VF
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 1.9mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
74mOhm @ 19.4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
135 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
TK39N60W5,S1VF Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5456330
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
270W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4100 pF @ 300 V
standardLeadTime:
24 Weeks
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
TO-247
Current - Continuous Drain (Id) @ 25°C:
38.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK39N60
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK39N60W5,S1VF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 1.9ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 74mohm @ 19.4a, 10v. The maximum gate charge and given voltages include 135 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 270w (tc). The product's input capacitance at maximum includes 4100 pf @ 300 v. It has a long 24 weeks standard lead time. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. to-247 is the supplier device package value. The continuous current drain at 25°C is 38.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk39n60, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

Yes. You can also search TK39N60W5,S1VF on website for other similar products.
We accept all major payment methods for all products including ET11937586. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TK39N60W5,S1VF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK39N60W5,S1VF. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK39N60W5,S1VF.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11937586 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11937586.
Yes. We ship TK39N60W5,S1VF Internationally to many countries around the world.