Toshiba Semiconductor and Storage TK40A06N1,S4X

TK40A06N1-S4X Toshiba Semiconductor and Storage TK40A06N1,S4X
TK40A06N1,S4X
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 300µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
10.4mOhm @ 20A, 10V
edacadModel:
TK40A06N1,S4X Models
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4563070
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 30 V
standardLeadTime:
24 Weeks
Mounting Type:
Through Hole
Series:
U-MOSVIII-H
Supplier Device Package:
TO-220SIS
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK40A06
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK40A06N1,S4X. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 300µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 10.4mohm @ 20a, 10v. The maximum gate charge and given voltages include 23 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 30w (tc). The product's input capacitance at maximum includes 1700 pf @ 30 v. It has a long 24 weeks standard lead time. The product is available in through hole configuration. The product u-mosviii-h, is a highly preferred choice for users. to-220sis is the supplier device package value. The continuous current drain at 25°C is 40a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk40a06, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11937585 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11937585.
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